Semicera’s Silicon Carbide Wafer Pedestal is a high-performance platform designed to improve the efficiency of epitaxy and etching processes. As a key component supporting processes such as Si Epitaxy and SiC Epitaxy, semicera’s product can maintain excellent stability and precision under extreme conditions. Whether it is monocrystalline silicon (Monocrystalline Silicon) manufacturing or GaN on SiC Epitaxy, semicera’s Silicon Carbide Wafer Pedestal can meet various semiconductor manufacturing needs.
Silicon Carbide Wafer Pedestal is suitable for a variety of key equipment such as MOCVD Susceptor, Pancake Susceptor, RTP Carrier, etc., and also performs well in LED epitaxial susceptors (LED Epitaxial Susceptor) and barrel susceptors (Barrel Susceptor). semicera’s products can also be used in complex process environments such as photovoltaic parts, PSS Etching Carriers and ICP Etching Carriers to ensure efficient production and high-quality finished products.
Semicera’s Silicon Carbide Wafer Pedestal uses advanced materials and innovative design, especially in high temperature and corrosive environments. It can effectively support LED epitaxy, photovoltaics and other complex semiconductor manufacturing processes, reduce stress and defects, ensure stable wafer transfer and processing, and provide reliable protection for high-precision manufacturing processes.
Whether you need to support epitaxy, etching or other high-end manufacturing processes, semicera’s Silicon Carbide Wafer Pedestal can provide you with excellent solutions. With its excellent performance in Si Epitaxy and SiC Epitaxy, this product is a key component to ensure the efficient operation of semiconductor process
Semicera Semiconductor integrates R&D and production with dual research centers and three production bases, supporting 50 production lines and 200+ employees.
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