Como um profissional fabricante chinês, fornecedor e exportador de Silicon Carbide revestimento cerâmico. O revestimento cerâmico do Carbide Silicon Carbide de Semeciera é amplamente utilizado em componentes-chave de equipamentos de fabricação de semicondutores, especialmente em processos de processamento como DCV e PECV. A Semicera está empenhada em fornecer tecnologia avançada e soluções de produtos para a indústria de semicondutores, e saúda a sua nova consulta.
Our company provides SiC coating process services by CVD method on the surface of graphite, ceramics and other materials, so that special gases containing carbon and silicon react at high temperature to obtain high purity SiC molecules, molecules deposited on the surface of the coated materials, forming SIC protective layer.
1. High temperature oxidation resistance:
the oxidation resistance is still very good when the temperature is as high as 1600 C.
2. High purity : made by chemical vapor deposition under high temperature chlorination condition.
3. Erosion resistance: high hardness, compact surface, fine particles.
4. Corrosion resistance: acid, alkali, salt and organic reagents.
SiC-CVD Properties |
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Estrutura de Cristal | FCC β phase | |
Density | g/cm ³ | 3.21 |
Hardness | Vickers hardness | 2500 |
Grain Size | μm | 2~10 |
Pureza química | % | 99.99995 |
Capacidade térmica | J·kg-1 ·K-1 | 640 |
Temperatura de sublimação | ℃ | 2700 |
Felexural Strength | MPa (RT 4-point) | 415 |
Módulo de Young’s | Gpa (4pt bend, 1300℃) | 430 |
Thermal Expansion (C.T.E) | 10-6K-1 | 4.5 |
Thermal conductivity | (W/mK) | 300 |
Semicera Semiconductor integrates R&D and production with dual research centers and three production bases, supporting 50 production lines and 200+ employees.
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